d top g s d back s g wbfbp-03b plastic-encapsulate mosfet s mosfet( n-channel ) description high cell density, dmos technology. these products have been designed to minimize on-state resistance while provi de rugged, reliable, and fast switching performance. they can be used in most applications requiring up to 400ma dc and can deliver pulsed currents up to 2a. these products are particularly suited for low voltage, low current applications such as small servo motor control, power mosfet gate drivers, and ot her switching applications. features high density cell design for low r ds(on) voltage controlled small signal switch rugged and reliable high saturation current capability application n-channel enhancement mode field effect transistor for portable equipment:(i.e. m obile phone,mp3, md,cd-rom, dvd-rom, note book pc, etc.) marking: 72 d 72 g s maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value units v ds drain-source v oltage 60 v v gss gate-source voltage - continuous 20 v i d maximum drain current - pulsed 115 ma p d power dissipation 150 mw r ja thermal resistance from junction to ambient 833 /w t j junction temperature 150 t stg storage temperature -55~+ 150 wbfbp-03b (1.21.20.5) unit: mm 1. gate 2. source 3. drain 2012-0 willas electronic corp. M7002NND03
electrical characteristics (t a=25 unless otherwise specified) paramete r symbol test conditions min t yp max unit drain-source breakdown voltage v (br)dss v gs =0v,i d =10 a 60 gate-threshold voltage* v th(gs) v ds =v gs , i d =250 a 1 2.5 v gate-body leakage l gss v ds =0v, v gs =25v 80 na v ds =60v, v gs =0v 0.08 zero gate voltage drain current i dss v ds =60v,v gs =0v,t j =125 500 a on-state drain current* i d(on) v gs =10v, v ds =7v 500 ma v gs =10v, i d =500ma 1 7.5 drain-source on-resistance* r ds( on) v gs =5v, i d =50ma 1 7.5 ? v gs =10v, i d =500ma 0.5 3.75 drain-source on- voltage * v ds( on) v gs =5v, i d =50ma 0.05 0.375 v forward tran conductance* g fs v ds =10v, i d =200ma 80 500 ms diode forward voltage v sd i s =115ma, v gs =0v 0.55 1.2 v input capacitance c iss 50 output capacitance c oss 25 reverse transfer capacitance c rss v ds =25v, v gs =0v,f=1mhz 5 pf * pulse test : pulse width 300 s, duty cycle 2%. switching time turn-on time t d(on) 20 turn-off time t d(off) v dd =25v,r g =25 ? i d =500ma,v gen =10v r l =50 ? 40 ns 2012-0 willas electronic corp. wbfbp-03b plastic-encapsulate mosfet s M7002NND03
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